Oxygen and carbon measurements on silicon slices by the IR methodSTALLHOFER, P; HUBER, D.Solid state technology. 1983, Vol 26, Num 8, pp 233-237, issn 0038-111XArticle

COMPARISON OF SHUBNIKOV-DE HAAS EFFECT AND CYCLOTRON RESONANCE ON SI(100) MOS TRANSISTORS UNDER UNIAXIAL STRESSGESCH H; DORDA G; STALLHOFER P et al.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 7; PP. 543-546; BIBL. 14 REF.Article

Correlation between DLTS and TRXFA measurements of copper and iron contaminations in FZ and CZ silicon wafers ; application to gettering efficienciesHACKL, B; RANGE, K.-J; STALLHOFER, P et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 5, pp 1495-1498, issn 0013-4651Article

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High purity silicon VI (Phoenix AZ, 22-27 October 2000)Claeys, C.L; Rai-Choudhury, P; Watanabe, M et al.SPIE proceedings series. 2000, isbn 1-56677-284-2, XIX, 695 p, isbn 1-56677-284-2Conference Proceedings

γ-ray diffraction studies of the perfection of large silicon single crystalsSCHNEIDER, J. R; GRAF, H. A; GONCALVES, O et al.Journal of crystal growth. 1987, Vol 80, Num 2, pp 225-240, issn 0022-0248Article

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